| 发明名称 | MRAM device and fabrication method thereof | ||
| 摘要 | A method of forming and a magnetoresistive random access memory (MRAM) device. In an embodiment, the MRAM device includes a magnetic tunnel junction (MTJ) disposed over a bottom electrode, the magnetic tunnel junction having a first sidewall, a top electrode disposed over the magnetic tunnel junction, and a dielectric spacer supported by the magnetic tunnel junction and extending along sidewalls of the top electrode, the dielectric spacer having a second sidewall substantially co-planar with the first sidewall of the magnetic tunnel junction. | ||
| 申请公布号 | US9172033(B2) | 申请公布日期 | 2015.10.27 |
| 申请号 | US201313935210 | 申请日期 | 2013.07.03 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Sung Fu-Ting;Huang Wei-Hang;Hsu Chern-Yow;Liu Shih-Chang;Tsai Chia-Shiung |
| 分类号 | H01L29/82;H01L43/12;H01L43/08;H01L27/22 | 主分类号 | H01L29/82 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A magnetoresistive random access memory (MRAM) device, comprising: a magnetic tunnel junction (MTJ) disposed over a bottom electrode, the magnetic tunnel junction having a first sidewall; a top electrode disposed over an upper surface of the magnetic tunnel junction; a dielectric spacer on the upper surface of the magnetic tunnel junction and extending along sidewalls of the top electrode, the dielectric spacer having a width along the upper surface of the magnetic tunnel junction equal to a distance from a sidewall of the top electrode to a sidewall of the magnetic tunnel junction; and a dielectric cover extending over the dielectric spacer and on at least a portion of the top electrode. | ||
| 地址 | Hsin-Chu TW | ||