SEMICONDUCTOR INSPECTION DEVICE, AND INSPECTION METHOD USING CHARGED PARTICLE BEAM

摘要

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, said device being capable of applying a positive or negative voltage to the electrode and obtaining images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. First, an image (first image) is obtained using the EH and positive potential conditions. Next, an image (second image) is obtained using the EL and negative potential conditions. Next, an image (third image) is obtained at the same position as the second image, and by using the EL and positive potential conditions.

主权项

1. A semiconductor inspection device characterized in comprising
a charged particle gun to generate a charged particle beam; a sample holder to support a sample; a deflection section to make the charged particle beam scanned to a surface of the sample; a detector to detect a secondary electron generated by the charged particle beam being irradiated onto the sample; an image processing section to process an output from the detector as an image; a sample potential controlling section to control a potential of the sample; a counter electrode disposed between the sample and an objective lens; a power source section to apply one of a positive potential and a negative potential with a potential of the sample defined as a reference to the counter electrode; an emissivity calculation section to calculate a secondary electron emissivity based on a current amount of the charged particle beam and the secondary electron; an energy calculation section to calculate a first incident energy in which the secondary electron emissivity is larger than 1 and a second incident energy in which the secondary electron emissivity is smaller than 1 based on an output of the emissivity calculation section; and a controlling section to control one of the first incident energy and the second incident energy and an application of one of the positive potential and the negative potential to the counter electrode based on measuring conditions for the sample.