| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for processing a silicon substrate capable of being accurately processed with high controllability even in hole processing of a reversely tapered shape with a large inclination angle.SOLUTION: Disclosed is a method which alternately and repetitively provides an etching step in which a hole is formed in a silicon substrate by etching processing while applying self-bias, and a protective film providing step in which a protective film is provided so as to cover the inner surface of the hole. In the etching step, while removing the protective film of the hole bottom, the silicon substrate is etched via the space. Here, in the etching step immediately before and after inserting the protective film providing step therebetween, an area of the space formed by removing the protective film is made larger.</p> |
