| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile associative memory cell that is robust to variations in device property.SOLUTION: A non-volatile associative memory cell CC includes: a first transistor M1 having one end connected to a first junction point and a control end connected to a first search line/SL; a second transistor M2 having one end connected to the first junction point and a control end connected to a second search line SL; a first MTJ element MTJ1 arranged between the other end of the first transistor M1 and a second junction point; a second MTJ element MTJ2 arranged between the other end of the second transistor M2 and the second junction point; a third MTJ element MTJ3 arranged in series with the first MTJ element MTJ1, between the other end of the first transistor M1 and the second junction point; and a fourth MTJ element MTJ4 arranged in series with the second MTJ element MTJ2, between the other end of the second transistor M2 and the second junction point.</p> |
