发明名称 MULTI CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTI CHARGED PARTICLE BEAM WRITING METHOD
摘要 A multi charged particle beam writing apparatus includes a dose calculation unit to calculate a first dose resolving the resist of the target object, for a first beam of the multiple beams, corresponding to a pattern forming region, in which a pattern is arranged; and to calculate a second dose not resolving the resist, for a second beam of the multiple beams, corresponding to a no-pattern forming region, which surrounds the whole perimeter of the pattern and in which no pattern is arranged, and a deflection control unit to control a plural blankers so that a dose of the first beam is to be the first dose calculated and a dose of the second beam is to be the second dose calculated.
申请公布号 US2015303029(A1) 申请公布日期 2015.10.22
申请号 US201514755376 申请日期 2015.06.30
申请人 NuFlare Technology, Inc. 发明人 MATSUMOTO Hironobu
分类号 H01J37/24;H01J37/20;H01J37/04;H01J37/317 主分类号 H01J37/24
代理机构 代理人
主权项 1. A multi charged particle beam writing apparatus comprising: a stage configured to mount a target object and to be continuously movable, a resist having been applied to the target object; an emission unit configured to emit a charged particle beam; an aperture member, in which a plurality of openings are formed, configured to form multiple beams by letting a region including a whole of the plurality of openings be irradiated with the charged particle beam and letting portions of the charged particle beam respectively pass through a corresponding opening of the plurality of openings; a plurality of blankers configured to respectively perform blanking deflection of a corresponding beam in the multiple beams having passed through the plurality of openings of the aperture member; a blanking aperture member configured to block each beam having been deflected to be in a beam-off state by the plurality of blankers; a dose calculation unit configured to calculate a first dose that resolves the resist, for a first beam of the multiple beams which is corresponding to a pattern forming region, in which a figure pattern is arranged, andcalculate a second dose that does not resolve the resist, for a second beam of the multiple beams which is corresponding to a no-pattern forming region, which surrounds a whole perimeter of the figure pattern and in which no figure pattern is arranged, wherein the first dose is calculated by using the second dose and the second dose is calculated by using the first dose; and a deflection control unit configured to control the plurality of blankers so that the first beam and the second beam are irradiated on the target object, the first beam irradiated for the first dose and resolves the resist and the second beam irradiated for the second dose and does not resolve the resist.
地址 Yokohama JP