SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve improvement in erasing efficiency in a semiconductor device with a built-in nonvolatile memory.SOLUTION: A semiconductor device comprises a memory gate MG which is composed of: a first memory gate MG1 including a second gate insulation film GI2 composed of a second insulation film IL2 and a first memory gate electrode MGE1; and a second memory gate MG2 including a third gate insulation film GI3 composed of a third insulation film IL3 and a second memory gate electrode MGE2. An undersurface of the second memory gate electrode MGE2 is set lower than an undersurface of the first memory gate electrode MGE1. With this configuration, field concentration occurs at the time of erasing at a corner of the first memory gate electrode MGE1 on a selection gate CG side and on a semiconductor substrate SUB side, and at a corner of the second memory gate electrode MGE2 on the first memory gate MG1 side and on the semiconductor substrate SUB side thereby to make it easy to inject holes in the second insulation film IL2 and the third insulation film IL3.