| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photoelectric conversion device having a high absorption rate.SOLUTION: When performing anisotropic etching of an n-type single crystal silicon substrate 1 by using an alkaline solution, texture etching is performed while deflecting the n-type single crystal silicon substrate 1 by applying a stress thereto. Consequently, a texture is formed so that an angle &thetas; of a quadrangular pyramidal surface, formed due to distortion of crystal orientation, is larger than 54.75 degrees, that is the original angle of the 100 plane and 111 plane, for the substrate surface. |
