发明名称 |
PROTECTION SCHEME WITH DUAL PROGRAMMING OF A MEMORY SYSTEM |
摘要 |
A memory system or flash memory device may include a linking or grouping of blocks that are used for dual writing. In particular, meta-blocks in the memory may be linked in such a way that enables a data transfer to simultaneously occur in two meta-blocks. The dual versions of the programming may be used for error correction. If there is a failure or write error in one of the meta-blocks, then the data from the other meta-block may be used. If there is no failure then the secondary meta-block may be erased. |
申请公布号 |
US2015301755(A1) |
申请公布日期 |
2015.10.22 |
申请号 |
US201414291560 |
申请日期 |
2014.05.30 |
申请人 |
SanDisk Technologies Inc. |
发明人 |
Chodem Nagi Reddy;Manohar Abhijeet;Sivasankaran Vijay |
分类号 |
G06F3/06;G11C29/52;G06F11/10 |
主分类号 |
G06F3/06 |
代理机构 |
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代理人 |
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主权项 |
1. A flash memory device comprising:
a non-volatile storage having memory blocks storing data; and a controller in communication with the non-volatile storage, the controller is configured for:
establishing a primary update meta-block comprising memory blocks from a first die;establishing a secondary update meta-block comprising memory blocks from a second die; andprogramming, simultaneously, the primary update meta-block and the secondary update meta-block based on a host write command. |
地址 |
Plano TX US |