发明名称 PROTECTION SCHEME WITH DUAL PROGRAMMING OF A MEMORY SYSTEM
摘要 A memory system or flash memory device may include a linking or grouping of blocks that are used for dual writing. In particular, meta-blocks in the memory may be linked in such a way that enables a data transfer to simultaneously occur in two meta-blocks. The dual versions of the programming may be used for error correction. If there is a failure or write error in one of the meta-blocks, then the data from the other meta-block may be used. If there is no failure then the secondary meta-block may be erased.
申请公布号 US2015301755(A1) 申请公布日期 2015.10.22
申请号 US201414291560 申请日期 2014.05.30
申请人 SanDisk Technologies Inc. 发明人 Chodem Nagi Reddy;Manohar Abhijeet;Sivasankaran Vijay
分类号 G06F3/06;G11C29/52;G06F11/10 主分类号 G06F3/06
代理机构 代理人
主权项 1. A flash memory device comprising: a non-volatile storage having memory blocks storing data; and a controller in communication with the non-volatile storage, the controller is configured for: establishing a primary update meta-block comprising memory blocks from a first die;establishing a secondary update meta-block comprising memory blocks from a second die; andprogramming, simultaneously, the primary update meta-block and the secondary update meta-block based on a host write command.
地址 Plano TX US