| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor which can inhibit a decrease in on-state current.SOLUTION: A thin film transistor comprises: a substrate 10; a gate electrode 30; a gate insulation layer 40; a semiconductor layer (oxide semiconductor layer 50) including a channel region opposite to the gate electrode 30 across the gate insulation layer 40; a protection layer 60 located above the semiconductor layer; and a source electrode 80S and a drain electrode 80D which are electrically connected with the semiconductor layer. The semiconductor layer includes: a first region 51 located in a lower layer of the protection layer 60 and located above the gate electrode 30; and second regions 52 located on both sides of the first region 51, respectively, in which a resistance value of an upper region is lower than a resistance value at a lower region. One of the second regions 52 is electrically connected with the source electrode 80S and the other of the second regions 52 is electrically connected with the drain electrode 80D. A distance from a top face of the second region 52 to a top face of the gate insulation layer 40 is smaller than a distance from a top face of the first region 51 to the top face of the gate insulation layer 40.</p> |
