| 发明名称 | Neuristor-based reservoir computing devices | ||
| 摘要 | A neuristor-based reservoir computing device includes support circuitry formed in a complimentary metal oxide semiconductor (CMOS) layer, input nodes connected to the support circuitry and output nodes connected to the support circuitry. Thin film neuristor nodes are disposed over the CMOS layer with a first portion of the neuristor nodes connected to the input nodes and a second portion of the neuristor nodes connected to the output nodes. Interconnections between the neuristor nodes form a reservoir accepting input signals from the input nodes and outputting signals on the output nodes. A method for forming a neuristor-based reservoir computing device is also provided. | ||
| 申请公布号 | US9165246(B2) | 申请公布日期 | 2015.10.20 |
| 申请号 | US201313753152 | 申请日期 | 2013.01.29 |
| 申请人 | Hewlett-Packard Development Company, L.P. | 发明人 | Pickett Matthew D. |
| 分类号 | G06N3/04;G06N3/063 | 主分类号 | G06N3/04 |
| 代理机构 | Van Cott, Bagley, Cornwall & McCarthy | 代理人 | Van Cott, Bagley, Cornwall & McCarthy |
| 主权项 | 1. A neuristor-based reservoir computing device comprising: support circuitry formed in a complementary metal oxide semiconductor (CMOS) layer; input nodes connected to the support circuitry; output nodes connected to the support circuitry; thin film neuristor nodes disposed over the CMOS layer, a first portion of the neuristor nodes connected to the input nodes and a second portion of the neuristor nodes connected to the output nodes; and interconnections between the neuristor nodes to form a reservoir accepting input signals from the input nodes and outputting signals on the output nodes. | ||
| 地址 | Houston TX US | ||