发明名称 |
PVD ALN film with oxygen doping for a low etch rate hardmask film |
摘要 |
The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask. |
申请公布号 |
US9162930(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201313867606 |
申请日期 |
2013.04.22 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Cao Yong;Daito Kazuya;Jakkaraju Rajkumar;Tang Xianmin |
分类号 |
C23C14/34;C04B35/581;C23C14/06;H01L21/033;H01L21/3213;H01L21/02 |
主分类号 |
C23C14/34 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method of making a hardmask, comprising:
sputtering an aluminum target in an atmosphere containing an inert gas, a nitrogen containing gas, and an oxygen containing gas to deposit an oxygen doped polycrystalline aluminum nitride material, wherein the amount of nitrogen containing gas is more than two times the amount of oxygen containing gas; and patterning the oxygen doped polycrystalline aluminum nitride material to form the hardmask. |
地址 |
Santa Clara CA US |