NAND-TYPE FLASH MEMORY DEVICE AND METHOD OF PROGRAMING THE SAME

摘要

Disclosed are a NAND-type flash memory device, and a method for programming the NAND-type flash memory device. The NAND-type flash memory device may comprise: a memory cell array; and a row control circuit. The memory cell array includes: word lines; dummy word lines; string selection lines; a ground selection line; and bit lines which are arranged in a direction perpendicular to the word lines. The row control circuit generates a program voltage, a pass voltage, and a dummy pass voltage having a voltage level which is higher than 0 V and lower than the pass voltage, and controls the word lines, the string selection lines, and the ground selection line. The row control circuit applies the dummy pass voltage to the dummy word lines during a program process in order that a voltage pre-charged in the bit lines is transmitted into a channel of a memory transistor connected the dummy word lines in a program operation mode.