Gate-All-Around Nanowire MOSFET and Method of Formation

摘要

A method for fabricating a semiconductor device comprises forming a nanowire on an insulator layer at a surface of a substrate; forming a dummy gate over a portion of the nanowire and a portion of the insulator layer; forming recesses in the insulator layer on opposing sides of the dummy gate; forming spacers on opposing sides of the dummy gate; forming source regions and drain regions in the recesses in the insulator layer on opposing sides of the dummy gate; depositing an interlayer dielectric on the source regions and the drain regions; removing the dummy gate to form a trench; removing the insulator layer under the nanowire such that a width of the trench underneath the nanowire is equal to or less than a distance between the spacers; and forming a replacement gate in the trench.

主权项

1. A gate-all-around structure for a semiconductor device, comprising:
a substrate; an insulator layer comprising silicon dioxide disposed on the substrate; a nanowire substantially laterally disposed on the insulator layer; a source region disposed in communication with a first end of the nanowire; a drain region disposed in communication with a second end of the nanowire; a gate positioned substantially transverse to the nanowire, a bottom portion of the gate surrounding a portion of the nanowire between the source region and the drain region, and wherein the width of the bottom portion of the gate is less than the width of a top portion of the gate; and a layer of high-k dielectric material disposed on the nanowire between the gate and the nanowire.