RF Power Transistor

摘要

A semiconductor device including an RF power transistor in a semiconductor package is described. The semiconductor device comprises a gate lead frame, a drain lead frame, a die including a power transistor having a gate and a drain and a flange. A gate impedance matching network is connected between the gate lead frame and the gate. A drain impedance matching network is connected between the drain lead frame and the drain and includes a drain lead frame bond wire between the drain lead frame and the drain. A first conducting element is connected between the die and the flange and is arranged to provide a current path along which a return current can flow in use to lower an inductance associated with the drain lead frame bond wire.

主权项

1. A semiconductor device comprising an RF power transistor in a semiconductor package, comprising:
a gate lead frame; a drain lead frame; a die including an RF power transistor having a gate and a drain; a flange; a gate impedance matching network connected between the gate lead frame and the gate; and a drain impedance matching network connected between the drain lead frame and the drain, the drain impedance matching network including a drain lead frame bond wire between the drain lead frame and the drain, and a first conducting element electrically connected at both a first end and a second end to the flange and arranged to provide a current path along which a return current can flow in use to lower an inductance associated with the drain lead frame bond wire.