发明名称 |
ANTIFUSE OTP MEMORY CELL WITH PERFORMANCE IMPROVEMENT, AND MANUFACTURING METHOD AND OPERATING METHOD OF MEMORY |
摘要 |
An OTP memory cell (200) including an antifuse unit (206) and a select transistor (208) is provided. The antifuse unit includes an antifuse layer (210) and an antifuse gate (212) disposed on a substrate (202) in sequence, a modified extension doped region (214) disposed in the substrate below the antifuse layer, and a first doped region (216) and a second doped region (218) disposed in the substrate at two opposite sides of the antifuse gate. The select transistor includes a select gate (220) on the substrate, a gate dielectric layer (222) between substrate and select gate, the second doped region (218), and a third doped region (224). The second and the third doped region are respectively disposed in the substrate at two oppositesides of the select gate. The modified extension doped region, the antifuse layer and the antifuse gate form a varactor. |
申请公布号 |
EP2930750(A2) |
申请公布日期 |
2015.10.14 |
申请号 |
EP20150159869 |
申请日期 |
2015.03.19 |
申请人 |
EMEMORY TECHNOLOGY INC. |
发明人 |
WU, MENG-YI;CHEN, HSIN-MING;LU, CHUN-HUNG |
分类号 |
H01L27/112;G11C17/16;H01L23/525;H01L29/423;H01L29/78;H01L29/93 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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