| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. <P>SOLUTION: The seed material 12 for liquid phase epitaxial growth of single crystal silicon carbide has a surface layer including polycrystalline silicon carbide whose crystal polymorph is 3C. When the surface layer is subjected to X-ray diffraction, a primary diffraction peak corresponding to a (111) crystal plane is observed as the diffraction peaks corresponding to polycrystalline silicon carbide whose crystal polymorph is 3C, and no other primary diffraction peaks having diffraction intensity of 10% or more that of the primary diffraction peak corresponding to the (111) crystal plane is observed. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
