发明名称 Photo sensor, method of manufacturing photo sensor, and display apparatus
摘要 A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.
申请公布号 US9159866(B2) 申请公布日期 2015.10.13
申请号 US201313916790 申请日期 2013.06.13
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 Lee Won-Kyu;Oh Jae-Hwan;Jin Seong-Hyun;Chang Young-Jin;Choi Jae-Beom
分类号 H01L21/00;H01L31/18;H01L31/105;G02F1/133;H01L27/32 主分类号 H01L21/00
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. A method of manufacturing a photo sensor, the method comprising: forming a light receiving unit, a first adjacent unit, and a second adjacent unit on a substrate, such that: the light receiving unit includes an amorphous semiconductor material,the first and second adjacent units are formed as one body with the light receiving unit and the first and second adjacent units are separated from each other by the light receiving unit; and forming a first photo sensor electrode and a second photo sensor electrode such that the first photo sensor electrode is electrically connected to the first adjacent unit and the second photo sensor electrode is electrically connected to the second adjacent unit, wherein: the first adjacent unit includes a crystalline semiconductor material and the second adjacent unit includes an amorphous semiconductor material, the amorphous semiconductor material of the light receiving unit includes silicon, and forming the light receiving unit, the first adjacent unit, and the second adjacent unit includes: forming an amorphous semiconductor material layer on the substrate; andselectively crystallizing a region of the amorphous semiconductor material layer corresponding to the first adjacent unit.
地址 Yongin, Gyeonggi-Do KR