Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

摘要

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO2 falls within a range of 32 mol % to 48 mol %, a content of Al2O3 falls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of B2O3 falls within a range of 3 mol % to 10 mol %.

主权项

1. A method of manufacturing a semiconductor device comprising:
a first step of preparing a semiconductor element having a pn junction exposure part where a pn junction is exposed; and a second step of forming a glass layer such that the glass layer covers the pn junction exposure part in this order, wherein in the second step:
the glass layer is formed using a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and contains none of Pb, P, As, Sb, Li, Na and K, and wherein a content of CaO falls within a range of 15 mol % to 23 mol %;a layer made of the glass composition for protecting a semiconductor junction is formed on the pn junction exposure part by an electrophoresis method; andthe layer made of the glass composition for protecting a semiconductor junction is baked so that the glass layer for passivation is formed, and the glass composition for protecting a semiconductor junction is baked at 900° C. or below.