PECVD process

摘要

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

主权项

1. A method of determining thickness of a layer during deposition of the layer on a subjacent layer of a substrate, comprising:
reflecting a broad spectrum radiation from the substrate; analyzing the spectrum of the reflected light using a spectrograph; fitting a Fresnel model to the analyzed spectrum based on refractive index and extinction coefficient of the layer being deposited, and based on thickness of the subjacent layer; and determining optical properties of the subjacent layer and the layer thickness by minimizing the square of the difference between the analyzed spectrum and the model.