DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF FUNCTIONALITY

摘要

A semiconductor device includes a depletion mode GaN FET and an integrated driver/cascode IC. The integrated driver/cascode IC includes an enhancement mode cascoded NMOS transistor which is connected in series to a source node of the GaN FET. The integrated driver/cascode IC further includes a driver circuit which conditions a gate input signal and provides a suitable digital waveform to a gate node of the cascoded NMOS transistor. The cascoded NMOS transistor and the driver circuit are formed on a same silicon substrate.

主权项

1. A process of forming semiconductor device, comprising the steps of:
forming a depletion mode GaN FET; forming an integrated driver/cascode IC, by a process comprising the steps of:
providing a silicon substrate;forming an enhancement mode cascoded NMOS transistor in said silicon substrate; andforming a driver circuit in said silicon substrate, so that a gate node of said enhancement mode cascoded NMOS transistor is connected to said driver circuit; forming an electrical connection between a drain node of said GaN FET and a drain terminal of said semiconductor device; forming an electrical connection between a source node of said GaN FET and a drain node of said enhancement mode cascoded NMOS transistor; and forming an electrical connection between a gate terminal of said semiconductor device and said driver circuit.