INTEGRATED CIRCUITS AND METHODS OF FABRICATION THEREOF

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method includes providing a semiconductor substrate, defining a length on the semiconductor substrate corresponding to opposing vertices of a nanowire, removing a portion of the semiconductor substrate to provide a first fin structure and a second fin structure, etching a first cavity proximate to the first side, depositing a protective layer in the first cavity, removing a portion of the protective layer to expose a portion of the semiconductor substrate, and etching a second cavity at the exposed semiconductor substrate where the first and second cavities communicate. The first and second fin structures are adjacent where the length of the first fin structure corresponds to the opposing vertices and has a first side and a second side.

主权项

1. A method for fabricating an integrated circuit, comprising:
providing a semiconductor substrate; defining a length on the semiconductor substrate corresponding to opposing vertices of a nanowire; removing a portion of the semiconductor substrate to provide a first fin structure and a second fin structure wherein the first and second fin structures are adjacent and the length of the first fin structure corresponds to the opposing vertices and has a first side and a second side; etching a first cavity proximate to the first side; depositing a protective layer in the first cavity; removing a portion of the protective layer to expose a portion of the semiconductor substrate; and etching a second cavity at the exposed semiconductor substrate wherein the first and second cavities communicate.