| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME |
| 摘要 |
A semiconductor device includes a P-channel DMOS transistor provided with an N-type gate electrode, a P-channel MOS transistor provided with a P-type gate electrode, and an N-channel MOS transistor provided with an N-type gate electrode. The N-type gate electrode of the P-channel DMOS transistor desirably has a first end portion that is located on a source side of the P-channel DMOS transistor, a second end portion that is located on a drain side of the P-channel DMOS transistor, and a P-type diffusion layer at the first end portion. |
| 申请公布号 |
US2015287726(A1) |
申请公布日期 |
2015.10.08 |
| 申请号 |
US201514669714 |
申请日期 |
2015.03.26 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
NITTA Hiroaki;AKANUMA Hideyuki;KUWAZAWA Kazunobu |
| 分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a P-channel DMOS transistor provided with an N-type gate electrode; a P-channel MOS transistor provided with a P-type gate electrode; and an N-channel MOS transistor provided with an N-type gate electrode. |
| 地址 |
Tokyo JP |
