发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM |
摘要 |
Provided a method including forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times under a condition where a borazine ring structure in a fourth process gas is maintained. The cycle includes: (a) forming the first film by performing a first set a predetermined number of times, wherein the first set includes supplying a first process gas and supplying a second process gas to the substrate; and (b) forming the second film by performing a second set a predetermined number of times, wherein the second set includes supplying a third process gas and supplying the fourth process gas to the substrate. |
申请公布号 |
US2015287588(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201514677199 |
申请日期 |
2015.04.02 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
SANO Atsushi;HIROSE Yoshiro |
分类号 |
H01L21/02;C23C16/46;C23C16/52;C23C16/455 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times under a condition where a borazine ring structure in a fourth process gas is maintained, the cycle comprising:
(a) forming a film free of the borazine ring structure and including boron and nitrogen or a film free of the borazine ring structure and including boron, carbon and nitrogen as the first film by performing a first set a predetermined number of times, wherein the first set comprises: supplying a first process gas free of the borazine ring structure and including boron to the substrate and supplying a second process gas including nitrogen or including nitrogen and carbon to the substrate; and (b) forming a film having the borazine ring structure and including boron and nitrogen or a film having the borazine ring structure and including boron, carbon and nitrogen as the second film by performing a second set a predetermined number of times, wherein the second set comprises: supplying a third process gas to the substrate and supplying the fourth process gas having the borazine ring structure and an organic ligand to the substrate. |
地址 |
Tokyo JP |