发明名称 |
DOPED SUBSTRATE REGIONS IN MEMS MICROPHONES |
摘要 |
<p>Systems and methods for preventing electrical leakage in a MEMS microphone. In one embodiment, the MEMS microphone includes a semiconductor substrate, an electrode, a first insulation layer, and a doped region. The first insulation layer is formed between the electrode and the semiconductor substrate. The doped region is implanted in at least a portion of the semiconductor substrate where the semiconductor substrate is in contact with the first insulation layer. The doped region is also electrically coupled to the electrode.</p> |
申请公布号 |
WO2015153608(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
WO2015US23587 |
申请日期 |
2015.03.31 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
DIAMOND, BRETT, MATHEW;MUSA, JOHN, M.;ZINN, JOHN, W. |
分类号 |
H04R19/00 |
主分类号 |
H04R19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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