发明名称 DOPED SUBSTRATE REGIONS IN MEMS MICROPHONES
摘要 <p>Systems and methods for preventing electrical leakage in a MEMS microphone. In one embodiment, the MEMS microphone includes a semiconductor substrate, an electrode, a first insulation layer, and a doped region. The first insulation layer is formed between the electrode and the semiconductor substrate. The doped region is implanted in at least a portion of the semiconductor substrate where the semiconductor substrate is in contact with the first insulation layer. The doped region is also electrically coupled to the electrode.</p>
申请公布号 WO2015153608(A1) 申请公布日期 2015.10.08
申请号 WO2015US23587 申请日期 2015.03.31
申请人 ROBERT BOSCH GMBH 发明人 DIAMOND, BRETT, MATHEW;MUSA, JOHN, M.;ZINN, JOHN, W.
分类号 H04R19/00 主分类号 H04R19/00
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