| 发明名称 |
Method to Define Multiple Layer Patterns with a Single Exposure by Charged Particle Beam Lithography |
| 摘要 |
The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer and a second latent feature in the second patternable material layer. |
| 申请公布号 |
US2015287596(A1) |
申请公布日期 |
2015.10.08 |
| 申请号 |
US201514747054 |
申请日期 |
2015.06.23 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lu Yen-Cheng;Shih Chih-Tsung;Chen Jeng-Horng;Yu Shinn-Sheng;Yen Anthony |
| 分类号 |
H01L21/033;G03F1/78 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a first resist layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer and a second latent feature in the second patternable material layer. |
| 地址 |
Hsin-chu TW |
