发明名称 OPTIMIZATION OF READ THRESHOLDS FOR NON-VOLATILE MEMORY
摘要 An SSD controller dynamically adjust read thresholds in a NVM to reduce errors due to device threshold voltage distribution shifts, thus improving performance, reliability, and/or cost of a storage sub-system, such as an SSD. In a first aspect, the controller periodically performs offline tracking on a portion of the NVM. The controller reads a representative sub-portion with current read thresholds. If the read meets a condition, then the controller reads the sub-portion with sample read thresholds, estimates the device threshold voltage distributions, and adjusts the current read thresholds of the portion to calculated new operating read thresholds of the sub-portion. In a second aspect, the portion includes data with a known statistical average number of zero and/or one bits.
申请公布号 US2015287453(A1) 申请公布日期 2015.10.08
申请号 US201514687686 申请日期 2015.04.15
申请人 Seagate Technology LLC 发明人 WU Yingquan;Cohen Earl T
分类号 G11C11/56;G11C16/26 主分类号 G11C11/56
代理机构 代理人
主权项 1. A device comprising: a controller configured to optimize a read threshold voltage for a memory by: determining statistical characteristics of two adjacent memory levels partly based on a type of statistical distribution of the memory levels and a distribution of data storage values in the memory levels;computing an optimized read threshold voltage associated with the two adjacent memory levels by using the statistical characteristics of the two adjacent memory levels; andupdating the read threshold voltage with the optimized read threshold voltage.
地址 Cupertino CA US