| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which can form wiring in the same shape as designed. <P>SOLUTION: A semiconductor device manufacturing method comprises: a step of preparing a structure including a semiconductor substrate, an electrode located on a first surface of the semiconductor surface, and an insulation film provided on the first surface and having an opening at a location overlapping the electrode; a step of forming a resin projection on a second surface of the insulation film on the side opposite to the first surface side; a step of forming a first conductive film covering the electrode and the resin projection on the second surface; a step of forming, on a third surface of the first conductive film on the side opposite to the second surface side, a second conductive film having reflectance lower than that of the third surface of the first conductive film; a step of forming a photoresist layer on a fourth surface of the second conductive film on the side opposite to the third surface side; a step of exposing the photoresist layer in a state of covering a part of the photoresist layer with a mask layer; a step of developing the photoresist layer to form a photoresist pattern; and a step of etching the first conductive film and the second conductive film by using the photoresist pattern as a mask to form wiring formed from the first conductive film and covering at least a part of the resin projection and connecting with the electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
