发明名称 METHOD AND DEVICE FOR MEASURING CRITICAL DIMENSION OF NANOSTRUCTURES
摘要 Disclosed are a method and a device to measure a critical dimension of nanostructures capable of measuring the critical dimension of nanostructures using multispectral imageries. The method to measure a critical dimension of nanostructures comprises: a step of acquiring reference intensity distributions of light scattered from a reference object in other positions of the reference object arranged in an optical axis; a step of generating a library of reference intensity distribution arrays using the reference intensity distributions; a step of determining the intensity distributions of the light scattered by the object to be irradiated with respect to multiple spectrum domains in other positions of the object to be irradiated arranged in the optical axis; a step of generating an intensity distribution array using the determined intensity distributions; and a step of determining information on the critical dimension of the object to be irradiated by comparing the intensity distribution array with the library of the reference intensity distribution arrays.
申请公布号 KR20150111817(A) 申请公布日期 2015.10.06
申请号 KR20140170820 申请日期 2014.12.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHCHERBAKOV ALEXANDER VIACHESLAVOVICH;RIABKO MAXIM VLADIMIROVICH;LANTSOV ALEXEY DMITRIEVICH
分类号 G01B11/00;H01L21/66 主分类号 G01B11/00
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