发明名称 |
Wafer level package having cylindrical capacitor and method of fabricating the same |
摘要 |
Disclosed is a wafer level package having a cylindrical capacitor, which is capable of increasing electrostatic capacity thanks to the use of a cylindrical capacitor structure and which includes a wafer chip having a bonding pad formed thereon and an insulating layer formed thereon and exposing the bonding pad, a redistribution layer connected to the bonding pad and extending to one side of the insulating layer, a cylindrical outer electrode connected to the redistribution layer and having a center opening therein, a cylindrical inner electrode formed in the center opening of the outer electrode so as to be separated from the outer electrode, a dielectric layer formed between the outer electrode and the inner electrode, and a resin sealing portion formed on the insulating layer to cover the redistribution layer, the inner electrode, the outer electrode and the dielectric layer and having a first recess for exposing an upper surface of the inner electrode. A method of fabricating the wafer level package having a cylindrical capacitor is also provided. |
申请公布号 |
US9153641(B2) |
申请公布日期 |
2015.10.06 |
申请号 |
US201313752238 |
申请日期 |
2013.01.28 |
申请人 |
Samsung Electro-Mechanics Co., Ltd. |
发明人 |
Lee Seung Seoup;Yim Soon Gyu |
分类号 |
H01L29/92;H01L21/02;H01L49/02;H01L23/522;H01L23/31 |
主分类号 |
H01L29/92 |
代理机构 |
NSIP Law |
代理人 |
NSIP Law |
主权项 |
1. A wafer level package having a cylindrical capacitor, comprising:
a wafer chip including a bonding pad formed thereon and an insulating layer formed thereon and exposing the bonding pad; a redistribution layer connected to the bonding pad and extending to one side of the insulating layer; a cylindrical outer electrode connected to the redistribution layer and having a center opening therein; a cylindrical inner electrode formed in the center opening of the outer electrode so as to be separated from the outer electrode; a dielectric layer formed between the outer electrode and the inner electrode; and a resin sealing portion formed on the insulating layer to cover the redistribution layer, the inner electrode, the outer electrode and the dielectric layer, wherein a lower surface of the inner electrode is connected to a peripheral wiring layer which is formed on the insulating layer and which extends from outside the outer electrode into a center opening of the outer electrode so as not to be connected to the outer electrode. |
地址 |
Suwon-si KR |