| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing an area increase.SOLUTION: A semiconductor storage device of an embodiment comprises: first and second memory cell transistors; a first word line WL1 and a second word line WL2; a first transistor 50-1 and a second transistor 50-2; and a first driver circuit 60-1 and a second driver circuit 60-2. The first memory cell transistor is provided above a semiconductor substrate, and includes a charge storage layer. The second memory cell transistor is provided above a first memory cell transistor MT, and includes a charge storage layer. The first driver circuit 60-1 outputs the voltage to be applied to the first word line WL1, and the second driver circuit 60-2 outputs the voltage to be applied to the second word line WL2. The first transistor 50-1 connects the first word line WL1 and the first driver circuit 60-1, and the second transistor 50-2 connects the second word line WL2 and the second driver circuit 60-2. The size of the first transistor 50-1 differs from the size of the second transistor 50-2. |
