SEMICONDUCTOR STORAGE DEVICE

摘要

The present invention provides a semiconductor storage device capable of increasing a write margin, and reducing an increase of an area. The semiconductor storage device comprises: a plurality of memory cells arranged in a matrix; a plurality of bitline pairs arranged corresponding to a column of each memory cell; a writing drive circuit transferring the data to the bitline pair of selected column according to the writing data; a writing auxiliary circuit driving the bitline of a low voltage side of the bitline pair of the selected column with a negative voltage level. The writing auxiliary circuit comprises: a first signal wiring line; a first drive circuit driving the first signal wiring line according to a control signal; and a second signal wiring line generating the negative voltage base on the coupling capacity of interconnections between the first signal wiring line and the second signal according to the driving of the first drive circuit, and being connected to the bitline of the low voltage side.