发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a high quality semiconductor memory.SOLUTION: The semiconductor memory includes: a memory cell; a bit line which is electrically connected to one end of the memory cell; a first node capable of being electrically connected to the bit line; a sense module which includes a sense transistor in which the first node is connected to the gate; and a control circuit that controls the sense module. In a sense operation, the control circuit controls the sense module to charge the second node which is connected to one end of the sense transistor to a second voltage in which a threshold voltage of the sense transistor is subtracted from a first voltage.
申请公布号 JP2015176625(A) 申请公布日期 2015.10.05
申请号 JP20140052782 申请日期 2014.03.14
申请人 TOSHIBA CORP 发明人 MAEDA TAKASHI
分类号 G11C16/06;G11C16/04 主分类号 G11C16/06
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