METHOD AND APPARATUS FOR FORMING TiSiN FILM

摘要

Provided is a method of forming a TiSiN film on a surface of an object to be processed, the method including: repeating a first cycle a first predetermined number of times, the first cycle including supplying Ti raw material gas containing Ti raw material into a processing chamber, and supplying nitriding gas containing a nitridant into the processing chamber after the Ti raw material gas is supplied into the processing chamber; and repeating a second cycle a second predetermined number of times after repeating the first cycle the first predetermined number of times, the second cycle including supplying Si raw material gas containing Si raw material into the processing chamber, and supplying nitriding gas containing a nitridant into the processing chamber after the Si raw material gas is supplied into the processing chamber, wherein the Si raw material gas comprises an amine-based Si raw material gas.

主权项

1. A method of forming a TiSiN film on a surface of an object to be processed, the method comprising:
repeating a first cycle a first predetermined number of times, the first cycle including supplying a Ti raw material gas containing Ti raw material into a processing chamber where the object to be processed is accommodated, and supplying nitriding gas containing a nitridant into the processing chamber after the Ti raw material gas is supplied into the processing chamber; and repeating a second cycle a second predetermined number of times after repeating the first cycle the first predetermined number of times, the second cycle including supplying a Si raw material gas containing Si raw material into the processing chamber, and supplying a nitriding gas containing a nitridant into the processing chamber after the Si raw material gas is supplied into the processing chamber, wherein the Si raw material gas comprises an amine-based Si raw material gas.