发明名称 |
STRUCTURE OF A CMOS ACTIVE PIXEL |
摘要 |
The invention concerns a structure of a CMOS active pixel, comprising a semi-conductive substrate (1) of a first type, at least one first photodiode operating in photovoltaic mode comprising a photovoltaic conversion area (2) defined by a doped area of a second type forming a PN junction with the substrate, said first photodiode re-emitting photoelectric charge carriers collected by the PN junction during the exposure of said first photodiode to a light, at least one second photodiode operating in integration mode and reverse-biased, said second photodiode comprising a charge accumulation area (3) defined by a doped area of the second type forming a PN junction with the substrate, said charge accumulation area being exposed to the charge carriers from the photovoltaic conversion area (2) in order to accumulate such charge carriers. |
申请公布号 |
US2015281621(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201314438212 |
申请日期 |
2013.10.25 |
申请人 |
NEW IMAGING TECHNOLOGIES |
发明人 |
Ni Yang |
分类号 |
H04N5/374;H01L27/146 |
主分类号 |
H04N5/374 |
代理机构 |
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代理人 |
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主权项 |
1. An active pixel structure of CMOS type, comprising:
a semiconductor substrate of a first type, at least one first photodiode configured to operate in photovoltaic mode during exposure of said first photodiode to radiation, comprising a photovoltaic conversion region defined by a doped region of a second type forming a PN junction with the substrate, said first photodiode being configured to re-emit photoelectric charge carriers captured by the PN junction during exposure of said first photodiode to radiation; at least one second photodiode configured to operate in integration mode and to be reverse biased during exposure of said first photodiode to radiation, said second photodiode comprising a charge accumulation region defined by a doped region of the second type forming a PN junction with the substrate, said charge accumulation region being configured to be exposed to the charge carriers originating from the photovoltaic conversion region so as to accumulate said charge carriers; and at least one readout circuit to read the voltage of the first photodiode and to read charge measurement at the second photodiode. |
地址 |
Verrières-le-Buisson FR |