SEMICONDUCTOR DEVICES WITH CONTACT STRUCTURES AND A GATE STRUCTURE POSITIONED IN TRENCHES FORMED IN A LAYER OF MATERIAL

摘要

One illustrative device disclosed herein includes, among other things, an active region defined in a semiconductor substrate, a layer of material positioned above the substrate, a plurality of laterally spaced-apart source/drain trenches formed in the layer of material above the active region, a conductive source/drain contact structure formed within each of the source/drain trenches, a gate trench formed at least partially in the layer of material between the spaced-apart source/drain trenches in the layer of material, wherein portions of the layer of material remain positioned between the source/drain trenches and the gate trench, a gate structure positioned within the gate trench, and a gate cap layer positioned above the gate structure.

主权项

1. A device, comprising:
an active region defined in a semiconductor substrate; a layer of material positioned above said substrate; a plurality of laterally spaced-apart source/drain trenches formed in said layer of material above said active region; a conductive source/drain contact structure formed within each of said source/drain trenches; a gate trench formed at least partially in said layer of material between said spaced-apart source/drain trenches in said layer of material, wherein portions of said layer of material remain positioned between said source/drain trenches and said gate trench; a gate structure positioned within said gate trench; and a gate cap layer positioned above said gate structure, wherein an entirety of sidewalls of said gate cap layer directly contacts sidewalls of said gate trench.