| 摘要 |
This mask blank is provided with a structure obtained by stacking, upon a light-transmitting substrate (10), a phase shift film (11), a light-blocking film (13), and a hard mask film (15), in that order from the light-transmitting substrate side. The phase shift film is formed from a material including silicon. The hard mask film is formed from a material including at least one element selected from silicon and tantalum. The light-blocking film is formed from a material including chrome, and is provided with a structure obtained by stacking three layers, namely a lower layer (13a), an intermediate layer (13b), and an upper layer (13c). The upper layer has the highest chrome content in the light-blocking film. The intermediate layer has the lowest chrome content in the light-blocking film, and includes at least one metal selected from indium, tin, and molybdenum. |
