FORMING RESISTIVE RANDOM ACCESS MEMORIES TOGETHER WITH FUSE ARRAYS

摘要

A resistive random access memory array may be formed on the same substrate with a fuse array. The random access memory and the fuse array may use the same active material. For example, both the fuse array and the memory array may use a chalcogenide material as the active switching material. The main array may use a pattern of perpendicular sets of trench isolations and the fuse array may only use one set of parallel trench isolations. As a result, the fuse array may have a conductive line extending continuously between adjacent trench isolations. In some embodiments, this continuous line may reduce the resistance of the conductive path through the fuses.

主权项

1. A method comprising:
forming a chalcogenide memory array including forming select devices by forming two sets of orthogonal trenches, wherein said forming a chalcogenide memory array includes performing a process flow; and forming a fuse array on a same substrate as the chalcogenide memory array, wherein said forming the fuse array includes performing the process flow.