| 摘要 |
<p>A thin film comprising a composition obtained by polymerizing a monomer having the formula I: wherein: R1 is a hydrolysable group, R2 is a polarizability reducing organic group, and R3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.</p> |
