METHOD OF MANUFACTURING SEMICONDUCTOR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To reduce a current collapse phenomenon of a semiconductor transistor having a group III-V nitride semiconductor as a channel region. SOLUTION: The method of manufacturing the semiconductor transistor comprises the stages of: forming group III-V nitride semiconductor layers 3 and 4 on a substrate 1; forming a protective film 5 on the group III-V nitride semiconductor layers 3 and 4; annealing the protective film 5 and group III-V nitride semiconductor layers 3 and 4 at temperature of ≥900°C; forming first and second openings 7s and 7d at least in source regions and drain regions of the group III-V nitride semiconductor layers 3 and 4 in the protective film 5; forming a source electrode 9s which comes into ohmic contact with the group III-V nitride semiconductor layers 3 and 4 in the first opening 7s; forming a drain electrode 9d which comes into ohmic contact with the group III-V nitride semiconductors 3 and 4 in the second opening 7d; and forming a gate electrode 11 which comes into Schottky contact with the group III-V nitride semiconductor layers 3 and 4 between the source electrode 9s and drain electrode 9d. COPYRIGHT: (C)2008,JPO&INPIT