THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor array panel and a manufacturing method thereof are provided to exactly remove a photoresist layer and to reduce contact defects by differentiating degrees of undercuts under the photoresist layer at a boundary of contact holes. A gate line(121) including a pad is formed on a substrate(110). A gate dielectric(140) is formed on the gate line. A semiconductor layer is formed on the gate dielectric. A data line(171) and a drain electrode including pads are formed on the semiconductor layer. A protective layer(180) is laminated on the data line and the drain electrode. A first photoresist layer including a first portion and a second portion is formed on the protective layer. The protective layer is etched by using the first photoresist layer as a mask to form a first preliminary contact hole for exposing a part of the data line. The second portion of the first photoresist layer is removed. The protective layer is etched by using the first portion of the first photoresist layer to form a first contact hole and an opening unit. A conductor layer is laminated. The first photoresist layer and the conductor layer located thereon are removed to form a pixel electrode in the opening unit and a first contact auxiliary member in the first contact hole.