发明名称 PLASMA TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment device which performs stable microfabrication for a long period of time by covering an inner wall face of a treatment chamber with a material similar to a reaction product. <P>SOLUTION: The plasma treatment device is provided with: a vacuum treatment container; a sample stage 209 arranged inside the vacuum treatment container; a gas introduction means for introducing a process gas into the vacuum treatment container; a magnetic-field generation means for generating a magnetic field in the treatment container; and an exhaust means arranged at the lower part of the vacuum treatment container so as to exhaust a gas in the container. The plasma treatment device generates plasma by an interaction with the magnetic field while supplying high-frequency power into the vacuum treatment container so as to apply plasma treatment to a sample placed on the sample stage by the generated plasma. The vacuum treatment container is provided with: a tubular sidewall member 216, a lid member for covering the upper part of the sidewall member; and a dielectric plate 208 arranged on the sidewall member side of the lid member. A coating film including yttrium (Y) is formed onto the inner face of the sidewall member and the outer peripheral part of a face on the sidewall member side of the dielectric plate. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007243020(A) 申请公布日期 2007.09.20
申请号 JP20060065803 申请日期 2006.03.10
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KAWAGUCHI TADAYOSHI;FURUSE MUNEO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
主权项
地址