| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial wafer for light emitting diodes and a light emitting diode using the epitaxial wafer which stably provides a high brightness with less variation of the light emission. <P>SOLUTION: On a p-type GaAs substrate 1 a p-type GaAlAs active layer 2 and an n-type GaAlAs clad layer 3 formed in this order so that the distance X between the composition interface 4 and the pn interface 5 is 0.3-1.0 μm to form an epitaxial wafer 10 for light emitting diodes. Electrodes are formed on its both sides to form a light emitting diode. <P>COPYRIGHT: (C)2007,JPO&INPIT |
