| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for creating mask data and a mask suitable for a finer pattern, with which the depth of focus can be enlarged and dimensional changes upon defocusing can be decreased, by arranging an optimum auxiliary pattern and an OPC (optical proximity correction) pattern. <P>SOLUTION: The method for creating mask data includes a step of arranging an auxiliary pattern on a device pattern, where the top-end portion of the device pattern is subjected to a layout rule different from those in other portions. The spacing between the auxiliary pattern and the device pattern is increased in a portion, such as the top end of the device pattern where a large correction is imparted by an OPC process. By increasing the spacing at the top end of the device pattern from the auxiliary pattern than the spacing at a longer side of the device pattern from the auxiliary pattern, the spacing between the device pattern and the auxiliary pattern, after the OPC process, can be controlled to an appropriate range. Optimal auxiliary pattern and an OPC pattern can be obtained. <P>COPYRIGHT: (C)2007,JPO&INPIT |
