| 摘要 |
PROBLEM TO BE SOLVED: To provide a barrier film for a highly dense copper wiring semiconductor which can obtain a sufficient barrier effect with a film thickness enough to prevent film peeling and a fine wiring pitch in suppressing diffusion of a copper in the highly dense copper wiring semiconductor, and has no variation in barrier characteristics even if a temperature rises due to heat treatment, and to provide a sputtering target for forming the barrier film. SOLUTION: The barrier film for a highly dense copper wiring semiconductor consists of an Ni-Cr-based alloy film containing Cr: 5-30 wt.%, Ti and/or Zr: 1-10 wt.%, wherein the residue consists of inevitable impurities and Ni, the film thickness is 3-150 nm, and film thickness uniformity is not more than 10% at 1σ. The sputtering target for forming the barrier film is an Ni-Cr-based alloy containing Cr: 5-30 wt.%, Ti and/or Zr: 1-10 wt.%, wherein the residue consists of inevitable impurities and Ni, and a relative permeability in an in-plane direction of a sputtering face is not more than 100. COPYRIGHT: (C)2007,JPO&INPIT
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