Halbleitervorrichtung mit Elektrode aus Aluminium und feinkörnigem Silizium und ihr Herstellungsverfahren

摘要

A semiconductor device has an electrode interposed between an interlayer insulation film and a wire which is bonded thereto. A main component of the electrode is aluminum and the electrode contains fine-grained silicon in a concentration of 0.1 to 0.6 weight %. As a result, even if large ultrasonic power, a large load or the like is applied to the electrode when the wire is wire-bonded, damage such as the formation of a crack hardly generates at the interlayer insulation film. Therefore, the occurrence of defects due to the wire-bonding can be reduced.