| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma film deposition apparatus capable of depositing a uniform film on a surface of a hollow container without stuffing holes of a gas feed pipe with pollution or the like of a gas changed in a plasma state during the film deposition. <P>SOLUTION: In the plasma film deposition apparatus, a raw material gas is changed into a plasma state by the microwave energy, and a thin film is deposited on a surface of a hollow container 8. The angle of a gas hole at a fore end of a gas feed pipe 5 for filling the raw material gas is set in the direction of 30-60° from the horizontal direction with respect to a bottom surface part of the hollow container 8, and the holes of the gas feed pipe 5 are arranged uniformly in the circumferential direction. When the holes are arranged in the circumferential direction with a uniform spacing parallel to a cylindrical axis, the holes at the fore end of the gas feed pipe 5 have the same diameter. <P>COPYRIGHT: (C)2007,JPO&INPIT |
