| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to exactly and stably fix a potential of a supporting substrate on a ground potential by employing a supporting substrate contact of low resistance. A dielectric(2) is formed on a semiconductor supporting substrate(1). A transistor is formed on a semiconductor layer formed on the dielectric. A separation oxide layer(4) is formed on the semiconductor layer. Interlayer dielectrics(11A,11B,11C,11D,11E,11F,11G,11H) are formed on the semiconductor layer and the separation oxide layer. Wire layers(10,10C,10E,10G) are formed on the interlayer dielectric. Conductive layers(12B,12D,12F,12H) connect the semiconductor supporting substrate to the wire layers and fix a potential of the semiconductor supporting substrate. The conductive layers and the wire layers are formed around a region(TR) forming the transistor. |
