发明名称 Nonvolatile semiconductor storage apparatus and method of driving the same
摘要 A memory cell array is logically divided into a plurality of regions having different reading speeds, the respective regions having the different reading speeds include region information storage regions for storing region information in which at least two addresses present in the memory cell at the same time are set to be different regions, a reading control circuit is constituted to carry out a reading operation by determining any of the divided regions which is to be read, selecting an optimum reading method and controlling the reading circuit based on the region information stored in the region information storage region, and an address which can be read in a short time in multivalued information stored in one memory cell is set to be a high speed reading region and is distinguished from regions having the other reading speeds. Consequently, it is possible to efficiently write and read information of 2 bits or more in one memory cell array without reducing a using efficiency of the memory cell array.
申请公布号 US2007086245(A1) 申请公布日期 2007.04.19
申请号 US20060544608 申请日期 2006.10.10
申请人 NAKAYAMA MASAYOSHI;MIYOSHI ASAKO;YAMAHIRA SEIJI 发明人 NAKAYAMA MASAYOSHI;MIYOSHI ASAKO;YAMAHIRA SEIJI
分类号 G11C16/04 主分类号 G11C16/04
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