| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave device capable of modulating the strength of a surface acoustic wave at a high speed without applying a very high bias voltage. SOLUTION: A transversal filter 10 is provided with a sapphire substrate 11, a propagation layer 12 made of GaN, a barrier layer 13 made of AlGaN having a band gap wider than that of GaN, a first and second interdigital transducers 16 and 17 being a pair of electrodes formed on the surface of the barrier layer 13. The filter has a structure in which the first and second interdigital transducers 16 and 17 are formed of a Schottky electrodes 16a, 17a and ohmic electrodes 16b, 17b respectively, and the ohmic electrodes 16b, 17b are conducted to a two-dimensional electron gas 15 existing near a junction surface between the propagation layer 12 and the barrier layer 13. COPYRIGHT: (C)2007,JPO&INPIT
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