SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR HAVING NONSYMMETRICAL STRUCTURE, AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method for the same which reduce the resistance of a drain region while suppressing the generation of hot carriers. SOLUTION: The semiconductor device includes a field effect transistor having a source region and a drain region formed in the surface region of a semiconductor silicon board. The drain region has a multiple impurity diffusion layer including at least a first conductive impurity diffusion layer and a second conductive impurity diffusion layer. A bird's beak under a gate electrode formed in the drain region is larger than a bird's beak under a gate electrode formed in the source region. COPYRIGHT: (C)2007,JPO&INPIT